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CYStech Electronics Corp.
General Purpose PNP Digital Transistors (Built-in Resistor)
Spec. No. : C254N3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 1/3
DTA114TN3
Features
* Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on/off conditions need to be set for operation, making device design easy. * Complements the DTC114TN3
Equivalent Circuit
DTA114TN3 SOT-23
R1=10 k
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC (Max) Pd Tj Tstg Limits -50 -50 -5 -100 200 150 -55~+150 Unit V V V mA mW C C
DTA114TN3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics (Ta=25C)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT Min. Typ. Max. Unit -50 -50 -5 100 7 0.1 10 250 -0.5 -0.5 -0.3 V V V uA uA V
Spec. No. : C254N3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 2/3
Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-50V VEB=-4V IC=-10mA, IB=-1mA
600 VCE=-5V, IC=-1mA 13 k MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 1000 Saturation Voltage vs Collector Current
Current Gain---HFE
100
100
10 0.1 1
HFE@VCE=5 10 100
VCE(SAT)@IC=10I 10 1 10 Collector Current---IC(mA) 100
Collector Current---IC(mA)
PD - Ta 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( )
DTA114TN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L 3 B 1 2 S
Spec. No. : C254N3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 3/3
Marking:
6E
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 18,2002.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYCtek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA114TN3
CYStek Product Specification

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